Vol 17, No 1 (2013) > Articles >

Growth of CrSi2 Nanostructures Using CrCl2 Powder on Si Substrates

Wen Li 1 , Meng Erchao 1 , Tomoji Matsushita 2 , Shingo Oda 2 , Daisuke Ishikawa 2 , Kaito Nakane 2 , Hirokazu Tatsuoka 2

Affiliations:

  1. Graduate School of Science and Technology, Shizuoka University, 3-5-1 Johoku, Naka-ku, Hamamatsu 432-8011,Japan
  2. Faculty of Engineering, Shizuoka University, 3-5-1 Johoku, Naka-ku, Hamamatsu 432-8011, Japan

 

Abstract: Chromium disilicide (CrSi2) nanostructures were grown by the exposure of Si (111) substrates to CrCl2 vapor in an argon gas flow at atmospheric pressure without using any metal catalyst. Dependence of the growth condition on the structural property was investigated. Hexagonal-shaped CrSi2 microrods were grown at 750 °C with 0.05 g of CrCl2. As the quantity of CrCl2 increased to 0.1 g, the bundle of CrSi2 nanowires with microrods and web-liked CrSi2 nanostructure with turning angles were grown at 750 °C and 700 °C, respectively. The preliminary discussion on the growth mechanism of CrSi2 micro- and nanostructures was carried out.
Keywords: CrSi2, microrods, nanostructures, thermoelectric material
Published at: Vol 17, No 1 (2013) pages: 21-24
DOI:

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