Vol 17, No 2 (2013) > Articles >

Observation of Photovoltaic Effect and Single-photon Detection in Nanowire Silicon pn-junction

Arief Udhiarto 1 , Sri Purwiyanti 1 , Daniel Moraru 2 , Takeshi Mizuno 2 , Michiharu Tabe 2

Affiliations:

  1. Electrical Engineering Department, Faculty of Engineering, Universitas Indonesia, Depok 16424, Indonesia
  2. Research Institute of Electronics, Shizuoka University, 3-5-1 Johoku, Naka-ku, Hamamatsu 432-8011, Japan

 

Abstract:

We  study  nanowire  silicon  pin  and  pn-junctions  at  room  and  low  temperature.  Photovoltaic  effects  are  observed  for both devices at room temperature. At low temperature, nanowire pn-junction devices show their ability to detect single photon. This ability was not been observed for pin devices. Phosphorus-boron dopant cluster in the depletion region is considered  to  have  the  main  role  for  single-photon  detection  capability.  Fundamental  mechanism  of  dopant-based single-photon detection in nanowire pn-junction is described in details.

Keywords: dopant cluster, nanowire pn-junction, single dopant, single photon
Published at: Vol 17, No 2 (2013) pages: 64-68
DOI:

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