Vol 8, No 3 (2004) > Articles >

Optic Properties on AgGaSe2 Polycristal Fabrication

A Harsono Soepardjo 1 , I Dewa Janusetiawan 1

Affiliations:

 

Abstract: Polycristal AgGaSe2, is compound (I-III-VI2) a semiconductor as basic material for thin film for solar cell. Polycristal was succesfully grown using Bridgmann Method, heated on sequential temperature treatment until 850°C and cooled down slowly until room temperature. Results observed were in the form of ingot (bars) with more or less 3 cm length and 13 mm in diameter. By using X-Ray Fefraction, composition obtained of each element (weight %) was Ag = 29,3996 %, Ga = 36,8123 % and Se = 30,29 % while using X-Ray Difraction lattice parameter obtained/calculated a = 4,4112 Å, c = 8,8854 Å, and c/a = 2,01426.
Keywords: Bridgmann Method, chalcopyrite, polycristal AgGaSe2, lattice parameter.
Published at: Vol 8, No 3 (2004) pages: 98-101
DOI:

Access Counter: 774 views, 566 PDF downloads, .

Full PDF Download

References:

I Dewa Made Janusetiawan, Tesis Magister, Program Studi Ilmu Material, Program PascasarjanaFMIPA, Universitas Indonesia, Indonesia, 2001.

L. L. Kazmerski, F. R. White, M. S. Ayyagari, Y. J. Juang, R. P. Patterson, J. Vac. Sci. Technol. 14 (1977) 65.

S. Isomura, A. Nagamatsu, K. Shinohara, T. Aono, Solar Cell 16 (1986) 143.

R. Noufi, J. Dick, J. Appl. Phys. 58 (1985) 3884.

L. Stolt, J. Hedström, J. Kessler, M. Ruckh, K-O. Velthaus, H-W. Schock, Appl. Phys. Lett. 62 (1993) 597.

R. W. Birkmire, J. L. Phillips, Stable High Efficiency CuInSe2 Based Polycristalline Thin Films Tandem Solar Cell, Final Report, S.E.R.I Report No.SERI/STR 211-3249, 1987.

L. S. Palatnik, E. K. Belova, Neorgan. Mater.3 (1967) 2194.

A. Congiu, L. Garbado, P. Manca, Mat. Res. Bull. 8 (1973) 293.

D.W. Jones, In: C.H.L Goodmann (Ed.), Refractory Metal Crystal Growth Techniques, Crystal Growth Theory and Technique, vol. 1, Plenum Press, New York, 1980.

A.H. Soepardjo, Dr. Thesis, Universite Montpellier II, Perancis, 1993.