Vol 17, No 3 (2013) > Articles >

Synthesis of Tungsten Oxide Nanowires onto ITO Glass Using T-CVD

Tomy Abuzairi 1 , Bohr-Ran Huang 2 , Tzu-Ching Lin 3


  1. Department of Electrical Engineering, Faculty of Engineering, Universitas Indonesia, Depok 16424, Indonesia
  2. Graduate Institute of Electro-Optical Engineering, National Taiwan University of Science and Technology,Taipei 106, Taiwan, R.O.C.
  3. Department of Electronic Engineering, National Taiwan University of Science and Technology,Taipei 106, Taiwan, R.O.C.



Tungsten oxide is an n-type semiconductor with interesting physical and chemical properties that make it suitable for various technological applications. Tungsten oxide nanowires were synthesized not only at low temperature but also without the use of any catalysts. The tungsten oxide nanowires were synthesized at 550 °C with tungsten layers onto the ITO glass using thermal chemical vapor deposition (T-CVD). The SEM image shows that the tungsten oxide nanowires are effectively grown with the 200 nm tungsten film. The Raman spectra shoulder at ~690 cm-1 proves the synthesized of tungsten oxide nanowires.

Keywords: ITO glass, thermal chemical vapor deposition, Tungsten oxide nanowires
Published at: Vol 17, No 3 (2013) pages: 103-106

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