Vol 22, No 1 (2018) > Material and Metalurgical Engineering >

Structural and Photoluminescence Properties of ZnO Thin Films Deposited by Ultrasonic Spray Pyrolysis

Iwan Sugihartono 1 , Erfan Handoko 1 , Vivi Fauzia 2 , Artoto Arkudato 3 , Lara Permata Sari 1

Affiliations:

  1. Physic Study Program, Faculty of Mathematics and Natural Sciences, Universitas Negeri Jakarta, Rawamangun 13220, Indonesia
  2. Departemen Fisika, Faculty of Mathematics and Natural Sciences, Universitas Indonesia, Depok 16424, Indonesia
  3. Department of Physic, Faculty of Mathematics and Natural Sciences, Universitas Negeri Jember, Jember 68121, Indonesia

 

Abstract: The ZnO thin films on Si (111) substrate have been grown using ultrasonic spray pyrolisis (USP) at 450oC with different Zn concentration. The XRD patterns that the ZnO thin films have polycrystalline hexagonal wurtzite structure. The (002) and (101) peaks intensity change by different Zn molarities. Furthemore, according to the Scherer’s equation and Stokes-Wilson equation the crystallite size and internal strain of ZnO thin films in (002) and (101) peaks change with Zn concentration. Optically, PL spectra indicates that the ratio UV/GB emission of ZnO thin films is highest at Zn concentration 0.02 mol/ml. It’s predicted that by increasing Zn concentration, nonradiative transitions become dominant which originated from the defects such as lattice and surface defect. As conclusions the ZnO thin films with Zn concentration 0.02 mol/ml has better crystalline and optical quality.
Keywords: photoluminescence, thin films, USP, XRD, ZnO
Published at: Vol 22, No 1 (2018) pages: 13-16
DOI:

Access Counter: 263 views, 136 PDF downloads, .

Full PDF Download

References:

S.J. Pearton, D.P. Norton, K. Ip, Y.W. Heo, T. Steiner, Prog. Mater. Sci. 50 (2005) 293.

T.H. Breivik, S. Diplas, A.G. Ulyashin, A.E. Gunnaes, B.R. Olaisen, D.N. Wright, A. Holt, A. Olsen, Thin Solid Film. 515 (2007) 8479.

X.W. Sun, J.L. Zhao, S.T. Tan, L.H. Tan, C.H. Tung, G.Q. Lo, D.L. Kwong, Y.W. Zhang, X.M. Li, K.L. Teo, Appl. Phys. Lett. 92 (2008) 111113.

C. Yang, X.M. Li, W.D. Yu, X.D. Gao, X. Cao, Y.Z. Li, J. Phys. D: Appl. Phys. 42 (2009) 152002.

B.J. Jin, S. Im, S.Y. Lee, Thin Solid Fims. 366 (2000) 107.

N. Izyumskaya, V. Avrutin, U. Ozgur, Y.I. Alivov, H. Morkoc, Phys. Stat. Sol. 244 (2007) 1439.

S. Iwan, J.L. Zhao, S.T. Tan, S. Bambang, M. Hikam, H.M. Fan, X.W. Sun, Mater. Sci. Semicond. Process. 30 (2015) 263.

S. Iwan, V. Fauzia, A.A. Umar, X.W. Sun, AIP. Confrence. Proceedings. 1729 (2016) 020031.

S. Benramache, O. Belahssen, A. Arif, A. Guettaf, Optik. 125 (2014) 1303.

B.H Kong, S.K Mohanta, D.C Kim, H.K. Cho, Physica B. 401 (2012) 399.

S. Iwan, S. Bambang, J.L. Zhao, S.T. Tan, H.M. Fan, L. Sun, S. Zhang, H.H. Ryu, X.W. Sun, Physica B. 407 (2012) 2721.

J.D. Ye, S.L. Gu, S.M. Zhu, W. Liu, S.M. Liu, R. Zhang, Y. Shi, Y.D. Zheng, Appl. Phys. Lett. 88 (2006) 182112.

A. Ismail, M.J. Abdullah, J. King Saud Univ. Sci. 25 (2013) 209.

G.S. Thool, A.K Singh, R.S. Singh, A. Gupta, Md. Abu bin Hasan Susan, J. Saudi Chem. Soc. 18 (2014) 712.

Y. Chen, D.M. Bagnall, Z. Zhu, T. Sekiuchi, K.T. Park, K. Hiraga, T. Yao, S. Koyama, M.Y. Shen, T. Goto, J. Cryst. Growth. 181 (1997) 165.

R. Hong, J. Shao, H. He, Z. Fan, J. Appl. Phys. 99 (2006) 093520.

C.C. Lin, C.S. Hsiao, S.Y. Chen, S.Y. Cheng, J. Electrochem. Soc. 151 (2004) G285.